Crystal growth by a modified vapor pressure-controlled Czochralski (VCz) technique
2007; Elsevier BV; Volume: 310; Issue: 7-9 Linguagem: Inglês
10.1016/j.jcrysgro.2007.11.045
ISSN1873-5002
AutoresM. Neubert, P. Rudolph, Ch. Frank‐Rotsch, M. Czupalla, K. Trompa, Mike Pietsch, M. Jurisch, S. Eichler, B. Weinert, M. Scheffer‐Czygan,
Tópico(s)Chalcogenide Semiconductor Thin Films
ResumoA modified vapor pressure-controlled Czochralski (VCz) method is reported which employs a diving bell around the growing crystal. Semi-insulating (SI) GaAs crystals with a diameter of 160 mm and an overall length up to 220 mm were grown from melts of up to 23 kg, and compared with similar-sized crystals grown using a standard liquid-encapsulation Czochralski (LEC) process. Optimization of the VCz process was assisted by global numerical simulations. A slightly convex growth interface has been found to be the most suitable one for achieving a relatively low EPD of ∼104 cm−2, with an associated reduction in the probability of dislocation bunching. The carbon concentration of the crystals was controlled down to values of 1014 cm−3. The electrical properties, including the EL2° content are discussed.
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