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Acceptor Depletion in p-Type Porous Silicon

1998; Wiley; Volume: 168; Issue: 1 Linguagem: Inglês

10.1002/(sici)1521-396x(199807)168

1521-396X

G. Polisski, G. Dollinger, A. Bergmaier, D. Kovalev, H. Heckler, F. Koch,

Semiconductor materials and interfaces

physica status solidi (a)Volume 168, Issue 1 p. R1-R2 Rapid Research Note Acceptor Depletion in p-Type Porous Silicon G. Polisski, G. Polisski Technische Universität München, Physik-Department, D-85747 Garching, GermanySearch for more papers by this authorG. Dollinger, G. Dollinger Technische Universität München, Physik-Department, D-85747 Garching, GermanySearch for more papers by this authorA. Bergmaier, A. Bergmaier Technische Universität München, Physik-Department, D-85747 Garching, GermanySearch for more papers by this authorD. Kovalev, D. Kovalev Technische Universität München, Physik-Department, D-85747 Garching, GermanySearch for more papers by this authorH. Heckler, H. Heckler Technische Universität München, Physik-Department, D-85747 Garching, GermanySearch for more papers by this authorF. Koch, F. Koch Technische Universität München, Physik-Department, D-85747 Garching, GermanySearch for more papers by this author G. Polisski, G. Polisski Technische Universität München, Physik-Department, D-85747 Garching, GermanySearch for more papers by this authorG. Dollinger, G. Dollinger Technische Universität München, Physik-Department, D-85747 Garching, GermanySearch for more papers by this authorA. Bergmaier, A. Bergmaier Technische Universität München, Physik-Department, D-85747 Garching, GermanySearch for more papers by this authorD. Kovalev, D. Kovalev Technische Universität München, Physik-Department, D-85747 Garching, GermanySearch for more papers by this authorH. Heckler, H. Heckler Technische Universität München, Physik-Department, D-85747 Garching, GermanySearch for more papers by this authorF. Koch, F. Koch Technische Universität München, Physik-Department, D-85747 Garching, GermanySearch for more papers by this author First published: 29 January 1999 https://doi.org/10.1002/(SICI)1521-396X(199807)168:1 3.0.CO;2-4Citations: 7AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat No abstract is available for this article. References 1 A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997). 10.1063/1.366536 CASWeb of Science®Google Scholar 2 A. J. Simons, T. I. Cox, M. J. Uren, and P. D. I. Calcott, Thin Solid Films 255, 12 (1995). 10.1016/0040-6090(94)05622-K CASWeb of Science®Google Scholar 3 G. Polisski, H. Heckler, D. Kovalev, M. Schwartzkopff, and F. Koch, Appl. Phys. Lett. 73 (1998). to be published. Google Scholar 4 A. Nikolov, V.-P. Koch, G. Polisski, and F. Koch, Mater. Res. Symp. Proc. 358, 423 (1995). 10.1557/PROC-358-423 CASWeb of Science®Google Scholar 5 X. G. Zhang, S. D. Collins, and R. L. Smith, J. Electrochem. Soc. 136, 1561 (1989). 10.1149/1.2096961 CASWeb of Science®Google Scholar 6 K. J. Chang and D. J. Chadi, Phys. Rev. Lett. 60, 1422 (1988). 10.1103/PhysRevLett.60.1422 CASPubMedWeb of Science®Google Scholar 7 N. M. Johnson, Appl. Phys. Lett. 47, 874 (1985). 10.1063/1.95961 CASWeb of Science®Google Scholar Citing Literature Volume168, Issue1July 1998Pages R1-R2 ReferencesRelatedInformation