Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®
2007; Elsevier BV; Volume: 303; Issue: 1 Linguagem: Inglês
10.1016/j.jcrysgro.2006.11.151
ISSN1873-5002
AutoresConor Martin, M. Dauelsberg, H. Protzmann, Adam R. Boyd, E. J. Thrush, M. Heuken, Р.А. Талалаев, E.V. Yakovlev, A.V. Kondratyev,
Tópico(s)Silicon Carbide Semiconductor Technologies
ResumoThe modelling and subsequent experimental validation of nitride growth processes in commercial, production scale multi-wafer reactors is investigated with focus on group-III nitride compounds GaN and InGaN. The paper also deals with the development of group-III nitride growth processes at elevated process pressures, highlighting the effects of gas-phase nucleation phenomena on the growth efficiency of GaN. In addition, the latest hardware and process improvements to the Planetary Reactor® technology are presented, with focus on the development using a modelling approach, of a new gas injector design for III-nitride growth. Subsequent experimental validation of the new injector design, and its flexibility to changing process regimes for GaN and InGaN will be demonstrated for the 42×2″ Planetary Reactor®.
Referência(s)