Comparison of Pd/Ge/Pd/Ti/Au and Pd/Ge/Ti/Pt ohmic contacts to n-type InGaAs
2003; Elsevier BV; Volume: 57; Issue: 24-25 Linguagem: Inglês
10.1016/s0167-577x(03)00261-1
ISSN1873-4979
Autores Tópico(s)Semiconductor materials and devices
ResumoPd/Ge/Pd/Ti/Au and Pd/Ge/Ti/Pt ohmic contacts to n-type InGaAs were investigated. In the Pd/Ge/Pd/Ti/Au contact, minimum specific contact resistivity of 1.1×10−6 Ω cm− was achieved by rapid thermal annealing (RTA) at 400 °C for 10 s, and the ohmic performance was degraded with increasing annealing temperature due to the reaction between the ohmic materials and the InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact (high-10−6 Ω cm2) were maintained. In the Pd/Ge/Ti/Pt contact, low specific contact resistivity of 3.7×10−6 Ω cm2 was achieved by rapid thermal annealing at higher than 400 °C for 10 s. This was related to the formation of Pd–Ge compounds and the in-diffusion of Ge atoms to InGaAs surface. However, the specific contact resistivity increased to low-10−5 Ω cm2 with increasing annealing time. Superior ohmic contact and non-spiking planar interface were maintained even at 450 °C.
Referência(s)