Well‐width dependence of photoinduced intersubband absorption in GaAs/AlGaAs multi quantum wells
1992; American Institute of Physics; Volume: 71; Issue: 12 Linguagem: Inglês
10.1063/1.350432
ISSN1520-8850
AutoresD. Elbert, E. Ehrenfreund, J. Bajaj, G.J. Sullivan, D. M. Lind,
Tópico(s)Semiconductor Lasers and Optical Devices
ResumoThe photoinduced intersubband absorption of undoped GaAs/Al0.33Ga0.67 As multi quantum wells with different well widths is reported. Two different absorption bands are observed in each of the samples. One is polarized along the growth direction, is linear with the pump intensity, and is identified with the intersubband transition of free excitons. The other is not polarized, depends sublinearly on the pump intensity, and is assigned to an intersubband transition which involves interface trapped carriers.
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