Inhibition of acid etching of Pt by pre-exposure to oxygen plasma
1984; American Institute of Physics; Volume: 44; Issue: 4 Linguagem: Inglês
10.1063/1.94767
ISSN1520-8842
AutoresM. J. Kim, Lothar A. Gruenke, R. Saia, Shimon Cohen,
Tópico(s)Semiconductor materials and interfaces
ResumoPlatinum etching characteristics in aqua regia have been studied. It was found that prior exposure to an oxygen plasma inhibits the dissolution of platinum in aqua regia. Oxygen, far more abundant in the exposed platinum than in the unexposed platinum, plays a key role in forming an inhibition layer, such as PtO2, which prevents chlorine ion attack. This inhibition layer appears to retard platinum etching effectively in chlorine-based etch solutions. The layer has been observed to form at a fast rate, and it is insensitive to the oxygen partial pressure in the plasma chamber. The insoluble characteristics of both the inhibited platinum and the platinum silicide in aqua regia make it feasible to form an unframed contact interconnection for applications of very large scale integration.
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