Photocurrent and photoluminescence measurements in the near-band-edge region of 6H GaN
1998; American Institute of Physics; Volume: 83; Issue: 8 Linguagem: Inglês
10.1063/1.367232
ISSN1520-8850
AutoresK. Kornitzer, K. Thonke, R. Sauer, Markus Mayer, M. Kamp, K.J. Ebeling,
Tópico(s)ZnO doping and properties
ResumoThe optical transitions near the band edge in molecular-beam epitaxy grown 6H GaN films on sapphire have been studied by photocurrent (PC) and photoluminescence (PL) measurements. The low-temperature PC spectra show well-resolved free-exciton transitions, which allow us to determine the A, B, and C free-exciton energies and the corresponding direct band gaps. PL measurements were performed to check the assignment of the excitonic transitions and to derive strain-dependent excitonic parameters from the energetic position of the free A exciton transition, which serve as an input to the fit function for the PC spectra. Variation of the sample temperature between 5 and 300 K allows us to extract the temperature dependence of the band gap.
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