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Epitaxial growth quality optimization by supercomputer

1987; American Institute of Physics; Volume: 51; Issue: 5 Linguagem: Inglês

10.1063/1.98434

1520-8842

Shaun Clarke, Dimitri D. Vvedensky,

Metal and Thin Film Mechanics

Supercomputer simulations of molecular beam epitaxial growth are applied to modeling processing profiles. Illustration is provided by investigating the relative advantages of high incident beam flux growth, interrupted periodically to allow the growth front to relax, versus continual growth at a relatively low deposition rate.