Effect of an In P ∕ In 0.53 Ga 0.47 As interface on spin-orbit interaction in<mml:math xmlns:mml="http://www.w3.org/…
2005; American Physical Society; Volume: 71; Issue: 4 Linguagem: Inglês
10.1103/physrevb.71.045328
ISSN1550-235X
AutoresYiping Lin, Takaaki Koga, Junsaku Nitta,
Tópico(s)Advancements in Semiconductor Devices and Circuit Design
ResumoWe report the effect of the insertion of an InP/In$_{0.53}$Ga$_{47}$As Interface on Rashba spin-orbit interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As quantum wells. A small spin split-off energy in InP produces a very intriguing band lineup in the valence bands in this system. With or without this InP layer above the In$_{0.53}$Ga$_{47}$As well, the overall values of the spin-orbit coupling constant $\alpha$ turned out to be enhanced or diminished for samples with the front- or back-doping position, respectively. These experimental results, using weak antilocalization analysis, are compared with the results of the $\mathbf{k\cdot p}$ theory. The actual conditions of the interfaces and materials should account for the quantitative difference in magnitude between the measurements and calculations.
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