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Photoionisation cross sections of the ground states of neutral Si, P and S

1988; IOP Publishing; Volume: 21; Issue: 2 Linguagem: Inglês

10.1088/0953-4075/21/2/010

1361-6455

C. Mendoza, C. J. Zeippen,

X-ray Spectroscopy and Fluorescence Analysis

Photoionisation cross sections of the ground states of neutral Si, P and S are calculated in the near-threshold region using the close-coupling approximation including configuration interaction in the target. Results are compared with recent measurements of the photoionisation spectrum of P and S and good agreement is found for the resonance positions, but there is a significant discrepancy with the absolute value scale adopted in one of the experiments, on S. Bound states and oscillator strengths for Si and S are calculated in an attempt to obtain a more precise estimate of the accuracy of the cross sections.