Transport properties of iodine-free TiSe2
1981; Elsevier BV; Volume: 105; Issue: 1-3 Linguagem: Inglês
10.1016/0378-4363(81)90234-5
ISSN1873-2127
AutoresIsao Taguchi, Masatoshi Asai, Yutaka Watanabe, Makoto Oka,
Tópico(s)Organic and Molecular Conductors Research
ResumoIodine-free crystals of TiSe2 have been grown at growth temperatures Tg between 650 and 700°C by the selenium vapor transport method. Studies of the electrical properties show that they are of higher quality than the crystals grown for 500 ≤ Tg ≤ 600°C by iodine vapor transport. Data on the dc resistivity ϱ near 200 K suggest that the superlattice appears at a higher temperature than the temperature corresponding to the break in the dϱdT vs. T curve. Microwave resistivity measurements on TiSe2 do not show a strong absorption such as is observed in the linear-chain metal NbSe3 which undergoes charge-density-wave instabilities.
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