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Oxygen segregation in Czochralski silicon growth

1983; American Institute of Physics; Volume: 54; Issue: 2 Linguagem: Inglês

10.1063/1.332115

1520-8850

Wen Lin, David W. Hill,

Solidification and crystal growth phenomena

Oxygen segregation behavior in silicon is examined via the Czochralski crystal-pulling technique. The current experimental approach provides a constant concentration growth environment from which the effect of growth rate on oxygen incorporation level is examined. The results indicate that the equilibrium segregation coefficient of oxygen is smaller than unity, and is estimated to be ∼0.25.