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Stability Improvement of Gallium Indium Zinc Oxide Thin Film Transistors by Post-Thermal Annealing

2008; Institute of Physics; Volume: 16; Issue: 9 Linguagem: Inglês

10.1149/1.2980568

2151-2051

Jisim Jung, Kyoung‐Seok Son, Tae-Sang Kim, Myungkwan Ryu, Kyung‐Bae Park, Byungwook Yoo, Jang‐Yeon Kwon, Sangyoon Lee, Jongmin Kim,

ZnO doping and properties

The effects of post-thermal annealing on the stability of Ga2O3-In2O3-ZnO (GIZO) thin film transistors (TFT) were investigated by comparing the GIZO TFTs annealed for 3 hour and for 65 hours under high-field bias stress, light illumination, and long-term storage in air. We found that the poor stability of the GIZO TFTs under these stresses was remarkably improved after 65 hours' post-thermal annealing at 250 OC. The improvement of the stability is ascribed to the reduction of the trap sites in the GIZO layer and curing of weak atomic bonds otherwise susceptible to breaking during the stress.