Crystal structures and electrical properties of titanium films evaporated in high vacuum
1978; Elsevier BV; Volume: 51; Issue: 1 Linguagem: Inglês
10.1016/0040-6090(78)90212-2
ISSN1879-2731
AutoresYasuhiro Igasaki, Hiroji Mitsuhashi,
Tópico(s)Semiconductor materials and devices
ResumoThin titanium films were deposited on glass substrates maintained at various elevated temperatures. X-ray studies showed that higher substrate temperatures caused growth of the {1011} orientation in preference to the {0002} orientation and also increased the grain size in the films. The dependences of the electrical resistivity and the Hall coefficient on the substrate temperature were investigated: the variation of the resistivity with substrate temperature can be explained qualitatively in terms of the grain sizes of the films, but the main feature of the Hall coefficient was found to be closely related to the differences in preferred orientation of the crystals.
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