The influence of the p-n junction induced electric field on the optical properties of InGaN/GaN/AlGaN light emitting diode
1999; American Institute of Physics; Volume: 74; Issue: 10 Linguagem: Inglês
10.1063/1.123555
ISSN1520-8842
AutoresTinglei Wang, T. Sugahara, Shigeta Sakai, John Orton,
Tópico(s)Photocathodes and Microchannel Plates
ResumoThe temperature dependence of photoluminescence measurement was performed on an undoped In0.126Ga0.874N/GaN multiple quantum well (MQW) structure and a light emitting diode (LED) structure using this MQW as an active region. The emission energy of the LED structure showed a red shift of about 230 meV at room temperature compared with the undoped In0.126Ga0.874N/GaN MQW. This behavior of the LED structure is attributed to the quantum-confined Stark effect due to its p-n junction induced electric field. This conclusion was confirmed by a calculation and a detailed discussion based on the theory of the quantum-confined Stark effect.
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