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Accurate control of the misorientation angles in direct wafer bonding

2002; American Institute of Physics; Volume: 80; Issue: 5 Linguagem: Inglês

10.1063/1.1446987

1520-8842

Frank Fournel, H. Moriceau, B. Aspar, K. Rousseau, J. Eymery, Jean‐Luc Rouvière, N. Magnéa,

3D IC and TSV technologies

A direct wafer bonding process has been developed to accurately control both the bonding interface twist and tilt angles between a monocrystalline layer and a bare monocrystalline wafer. This process is based on the bonding of twin surfaces produced by splitting a single wafer, using for instance the Smart Cut® process. A targeted control of ±0.005° is obtained for the twist angle without any crystallographic measurement. Moreover, pure twist-bonded interfaces have been artificially made between two (001) bonded silicon surfaces.