Portal de Periódicos da CAPES

Photovoltaic properties of reactively sputtered a-SiHx films

1980; Elsevier BV; Volume: 35-36; Linguagem: Inglês

10.1016/0022-3093(80)90288-4

1873-4812

T. D. Moustakas, C. R. Wroński, D.L. Morel,

Semiconductor materials and interfaces

Abstract The effect of hydrogen incorporation on the photovoltaic properties of sputtered a-SiH x films has been studied. By varying the hydrogen partial pressure in the discharge at a substrate temperature of 275°C, films were fabricated having between 11 and 27 at.% of bonded hydrogen. The corresponding optical gaps were between 1.6 and 1.9 eV. The changes in open circuit voltages of Pd Schottky barrier devices made from these films indicated that the corresponding changes in barrier height followed that of the optical gaps. The AMl short circuit currents were found to depend non-monotonically on the partial pressure of hydrogen. The highest current found in this study is consistent with the collection of photogenerated carriers within ∼0.2 μm of the metal/a-SiH x interface. The observed variation in the short circuit currents is interpreted in terms of the modifications in both the defect and intrinsic electronic structure resulting from the hydrogen incorporation.