Reaction of Si(100) surfaces with C2H4: XPS and LEED studies
1998; Elsevier BV; Volume: 416; Issue: 1-2 Linguagem: Inglês
10.1016/s0039-6028(98)00587-1
ISSN1879-2758
AutoresMasato Ikeda, Teruyuki Maruoka, Naoyuki Nagashima,
Tópico(s)Advanced Chemical Physics Studies
ResumoThe reaction of double-domain Si(100)(2×1) surfaces exposed to low levels of C2H4 was studied using X-ray photoelectron spectroscopy and low energy electron diffraction (LEED). The C 1s spectra from these exposed Si surfaces could be separated into two components: the high binding energy component and the low binding energy component. The Si surfaces exposed at a sample temperature of 600 or 700°C showed a c(4×4) LEED pattern. These results suggest that either CHx or C–C bonds were present on the Si(100) surface in addition to SiC.
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