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Scavenging of Siliceous Grain‐Boundary Phase of 8‐mol%‐Ytterbia‐Stabilized Zirconia without Additive

2001; Wiley; Volume: 84; Issue: 11 Linguagem: Inglês

10.1111/j.1151-2916.2001.tb01086.x

1551-2916

Jong‐Heun Lee, Toshiyuki Mori, Ji‐Guang Li, Takayasu Ikegami, John Drennan, Doh‐Yeon Kim,

Nuclear materials and radiation effects

The grain‐boundary conductivity (ς gb ) of 8‐mol%‐ytterbia‐stabilized zirconia increased markedly with heat treatment between 1000° and 1300°C with a slow heating rate (0.1°C/min) before sintering. The extent of the ς gb improvement was the same or larger than that via Al 2 O 3 addition. The heat treatment did not affect the grain‐interior conduction when sintered at 1600°C, while Al 2 O 3 ‐derived scavenging significantly did, given the larger increment of total conductivity in the heat‐treated sample. The formation of a silicon‐containing phase in a discrete form was suggested as a possible route of scavenging the resistive phase from the correlation between average grain size and ς gb .