Patterning Graphene with Zigzag Edges by Self‐Aligned Anisotropic Etching
2011; Volume: 23; Issue: 27 Linguagem: Inglês
10.1002/adma.201100633
ISSN1521-4095
AutoresZhiwen Shi, Rong Yang, Lianchang Zhang, Yi Wang, Donghua Liu, Dongxia Shi, Enge Wang, Guangyu Zhang,
Tópico(s)Metamaterials and Metasurfaces Applications
ResumoAdvanced MaterialsVolume 23, Issue 27 p. 3061-3065 Communication Patterning Graphene with Zigzag Edges by Self-Aligned Anisotropic Etching Zhiwen Shi, Zhiwen Shi Nanoscale Physics and Device Lab, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorRong Yang, Rong Yang Nanoscale Physics and Device Lab, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorLianchang Zhang, Lianchang Zhang Nanoscale Physics and Device Lab, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorYi Wang, Yi Wang Nanoscale Physics and Device Lab, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorDonghua Liu, Donghua Liu Nanoscale Physics and Device Lab, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorDongxia Shi, Dongxia Shi Nanoscale Physics and Device Lab, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorEnge Wang, Enge Wang International Centre of Quantum Materials, School of Physics, Peking University, Beijing 100871, P. R. ChinaSearch for more papers by this authorGuangyu Zhang, Corresponding Author Guangyu Zhang [email protected] Nanoscale Physics and Device Lab, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaNanoscale Physics and Device Lab, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.Search for more papers by this author Zhiwen Shi, Zhiwen Shi Nanoscale Physics and Device Lab, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorRong Yang, Rong Yang Nanoscale Physics and Device Lab, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorLianchang Zhang, Lianchang Zhang Nanoscale Physics and Device Lab, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorYi Wang, Yi Wang Nanoscale Physics and Device Lab, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorDonghua Liu, Donghua Liu Nanoscale Physics and Device Lab, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorDongxia Shi, Dongxia Shi Nanoscale Physics and Device Lab, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaSearch for more papers by this authorEnge Wang, Enge Wang International Centre of Quantum Materials, School of Physics, Peking University, Beijing 100871, P. R. ChinaSearch for more papers by this authorGuangyu Zhang, Corresponding Author Guangyu Zhang [email protected] Nanoscale Physics and Device Lab, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. ChinaNanoscale Physics and Device Lab, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.Search for more papers by this author First published: 19 May 2011 https://doi.org/10.1002/adma.201100633Citations: 164Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Graphical Abstract A top-down approach for controlled tailoring of graphene nanostructures with zigzag edges is presented. It consists of two key steps: artificial defect patterning and hydrogen-plasma etching. With this approach, various graphene nanostructures with sub-10 nm features and identical zigzag edges are reliably achieved. This approach shows great promise for making future graphene devices or circuits. Supporting Information Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Filename Description adma_201100633_sm_suppl.pdf385.4 KB suppl Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. References 1 Y. W. Son, M. M. Cohen, S. G. Louie, Nature 2006, 444, 347. 2 J. Fernandez-Rossier, J. J. Palacios, Phys. Rev. Lett. 2007, 99, 177204. 3 W. L. Wang, S. Meng, E. Kaxiras, Nano Lett. 2008, 8, 241. 4 Y. W. Son, M. L. Cohen, S. G. Louie, Phys. Rev. Lett. 2006, 97, 216803. 5 K. Nakada, M. Fujita, G. Dresselhaus, M. S. Dresselhaus, Phys. Rev. B 1996, 54, 17954. 6 X. L. Li, X. R. Wang, L. Zhang, S. W. Lee, H. J. Dai, Science 2008, 319, 1229. 7 L. Y. Jiao, L. Zhang, X. R. Wang, G. Diankov, H. J. Dai, Nature 2009, 458, 877. 8 D. V. Kosynkin, A. L. Higginbotham, A. Sinitskii, J. R. Lomeda, A. Dimiev, B. K. Price, J. M. Tour, Nature 2009, 458, 872. 9 M. Y. Han, B. Ozyilmaz, Y. B. Zhang, P. Kim, Phys. Rev. Lett. 2007, 98, 206805. 10 a) L. A. Ponomarenko, F. Schedin, M. I. Katsnelson, R. Yang, E. W. Hill, K. S. Novoselov, A. K. Geim, Science 2008, 320, 356; b) J. W. Bai, X. Zhong, S. Jiang, Y. Huang, X. F. Duan, Nat. Nanotechnol. 2010, 5, 190; c) J. W. Bai, X. F. Duan, Y. Huang, Nano Lett. 2009, 9, 2083. 11 J. M. Cai, P. Ruffieux, R. Jaafar, M. Bieri, T. Braun, S. Blankenburg, M. Muoth, A. P. Seitsonen, M. Saleh, X. L. Feng, K. Mullen, R. Fasel, Nature 2010, 466, 470. 12 R. Yang, L. Zhang, Y. Wang, Z. Shi, D. Shi, H. Gao, E. Wang, G. Zhang, Adv. Mater. 2010, 22, 4014. 13 S. Neubeck, Y. M. You, Z. H. Ni, P. Blake, Z. X. Shen, A. K. Geim, K. S. Novoselov, Appl. Phys. Lett. 2010, 97, 053110. 14 Y. M. You, Z. H. Ni, T. Yu, Z. X. Shen, Appl. Phys. Lett. 2008, 93, 163112. 15 a) F. Guinea, T. Low, Philos. Trans. R. Soc. A 2010, 368, 5391; b) C. H. Park, L. Yang, Y. W. Son, M. L. Cohen, S. G. Louie, Nat. Phys. 2008, 4, 213. 16 X. J. Wu, X. C. Zeng, Nano Res. 2008, 1, 40. 17 M. Fujita, K. Wakabayashi, K. Nakada, K. Kusakabe, J. Phys. Soc. Jpn 1996, 65, 1920. 18 a) M. Pumera, Chem. Soc. Rev. 2010, 39, 4146; b) A. Ambrosi, A. Bonanni, M. Pumera, Nanoscale 2011, 3, 2256. 19 L. Y. Jiao, X. R. Wang, G. Diankov, H. L. Wang, H. J. Dai, Nat. Nanotechnol. 2010, 5, 321. 20 L. G. Cancado, M. A. Pimenta, B. R. A. Neves, M. S. S. Dantas, A. Jorio, Phys. Rev. Lett. 2004, 93, 247401. 21 a) Y. Kobayashi, K.-i. Fukui, T. Enoki, K. Kusakabe, Y. Kaburagi, Phys. Rev. B 2005, 71, 193406; b) Y. Niimi, T. Matsui, H. Kambara, K. Tagami, M. Tsukada, H. Fukuyama, Phys. Rev. B 2006, 73, 085421; c) K. A. Ritter, J. W. Lyding, Nat. Mater. 2009, 8, 235. 22 X. R. Wang, Y. J. Ouyang, X. L. Li, H. L. Wang, J. Guo, H. J. Dai, Phys. Rev. Lett. 2008, 100, 206803. 23 a) L. Yang, C.-H. Park, Y.-W. Son, M. L. Cohen, S. G. Louie, Phys. Rev. Lett. 2007, 99, 186801; b) S. Adam, S. Cho, M. S. Fuhrer, S. Das Sarma, Phys. Rev. Lett. 2008, 101, 046404; c) F. Sols, F. Guinea, A. H. C. Neto, Phys. Rev. Lett. 2007, 99, 166803; d) M. Evaldsson, I. V. Zozoulenko, H. Xu, T. Heinzel, Phys. Rev. B 2008, 78, 161407. 24 S. Kim, J. Nah, I. Jo, D. Shahrjerdi, L. Colombo, Z. Yao, E. Tutuc, S. K. Banerjee, Appl. Phys. Lett. 2009, 94, 062107. 25 Y. X. Yang, R. Murali, IEEE Electron. Device Lett. 2010, 31, 237. Citing Literature Volume23, Issue27July 19, 2011Pages 3061-3065 ReferencesRelatedInformation
Referência(s)