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Recombination processes in intrinsic semiconductors using impact ionization capture cross sections in indium antimonide and mercury cadmium telluride

1980; Pergamon Press; Volume: 20; Issue: 2 Linguagem: Inglês

10.1016/0020-0891(80)90011-1

1878-1160

Michael Y. Pines, O. M. Stafsudd,

Silicon and Solar Cell Technologies

A capture cross section model of band to band transitions in semiconductors utilizing the Shockley-Read (S-R) lifetime recombination process is presented. New data on photoconductive lifetime as well as previously published data on indium antimonide (InSb) and mercury cadmium telluride (HgCdTe) are correlated with theoretical data in another article in this journal. In this article, it is assumed that the recombination center is hydrogen-like and that the effective mass approximation and the quantum defect method apply. The transition from the valence band to the conduction band through the recombination center is a two-step transition. When the recombination center is unoccupied, the process involves a coulomb interaction potential. When the recombination center is occupied, the process involves a dipole moment interaction potential, which is shown to be the determining mechanism that limits the photoconductive lifetime below 250K for InSb with state of the art material. Auger lifetime and radiative lifetime are also calculated; the results show that these lifetimes become important for InSb at temperature greater than 250K. In HgCdTe, the S-R photoconductive lifetime limits the lifetime at lower background photon flux densities. At higher backgrounds, Auger lifetime limits the photoconductive lifetime when the recombination center density is as low as can be achieved with state-of-the-art material.