Surface Hydrogen Desorption as a Rate-Limiting Process in Silane Gas-Source Molecular Beam Epitaxy
1990; Institute of Physics; Volume: 29; Issue: 10A Linguagem: Inglês
10.1143/jjap.29.l1881
ISSN1347-4065
AutoresFumihiko Hirose, Maki Suemitsu, Nobuo Miyamoto,
Tópico(s)Electron and X-Ray Spectroscopy Techniques
ResumoSurface chemical processes of the silane gas-source molecular beam epitaxy were investigated for Si(100) and Si(111) surfaces by comparing the growth rate with the surface hydrogen coverage during epitaxy. The surface hydrogen coverage was obtained through a thermal desorption measurement just after a quenching of the epitaxy. It was found that the hydrogen desorption process is the major rate-limiting process both on Si(100) and Si(111) surfaces below 600°C.
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