MBE growth of Eu- or Tb-doped GaN and its optical properties
2002; Elsevier BV; Volume: 237-239; Linguagem: Inglês
10.1016/s0022-0248(01)02121-2
ISSN1873-5002
AutoresHyungjin Bang, Shin-ichi Morishima, Zhiqiang Li, Katsuhiro Akimoto, Masaharu Nomura, Eiichi Yagi,
Tópico(s)Semiconductor materials and devices
ResumoSingle crystalline Eu- or Tb-doped GaN was grown with the rare earth content up to 2% by molecular beam epitaxy (MBE) using ammonia. Sharp luminescence peaks originating from intra-atomic f–f-transition of the rare earth were observed, however, the intensity of Eu-doped GaN is two orders of magnitude stronger than that of Tb. The cause of the remarkable difference in the luminescence intensity between Eu- and Tb-doped GaN was discussed based on the coordination symmetry around the rare earth elements.
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