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Digital Etching of (001) InP Substrate by Intermittent Injection of Tertiarybutylphosphine in Ultrahigh Vacuum

1998; Institute of Physics; Volume: 37; Issue: 12B Linguagem: Inglês

10.1143/jjap.37.l1509

1347-4065

Nobuyuki Otsuka, Yutaka Oyama, Hideyuki Kikuchi, Jun-ichi Nishizawa, Ken Suto,

Photonic and Optical Devices

The intermittent injection of tertiarybutylphosphine (TBP), the injection and the evacuation of which are cyclically repeated, has been used for the selective-area etching of an InP (001) surface to study the surface adsorption/desorption mechanism in ultrahigh vacuum. Digital etching is achieved, as described by a modified Langmuir-type equation. It is assumed that TBP adheres to the surface within 0.1 s even at an injection pressure of 3×10 -5 Torr and prevents phosphorus dissociation during evacuation times longer than 5 s. The activation energy of 18 kcal/mol (at 340–390°C) is lower than that using tris-dimethylaminophosphorus. A specular surface is obtained on a sulfur-doped substrate.