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Atomic layer epitaxy of GaAs using triethylgallium and arsine

1989; American Institute of Physics; Volume: 54; Issue: 20 Linguagem: Inglês

10.1063/1.101195

1520-8842

Hideo Ohno, Shunsuke Ohtsuka, Hisayoshi Ishii, Y. Matsubara, Hideki Hasegawa,

Semiconductor Quantum Structures and Devices

Atomic layer epitaxy (ALE) of GaAs is realized using triethylgallium (TEG) and arsine in a conventional atmospheric pressure metalorganic vapor phase epitaxy reactor. It is shown that the use of TEG and arsine resulted in ALE growth of GaAs in rather limited ranges of substrate temperature and the TEG supply rate. The mechanism of ALE is also discussed with the aid of x-ray photoelectron spectroscopy on the surfaces of clean GaAs before and after exposure to TEG.