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Temperature behaviour of resonant cavity light-emitting diodes at 650 nm

2000; IOP Publishing; Volume: 15; Issue: 4 Linguagem: Inglês

10.1088/0268-1242/15/4/320

1361-6641

Pekko Sipilä, M. Saarinen, Mircea Guină, Ville Vilokkinen, M. Toivonen, M. Pessa,

Semiconductor Quantum Structures and Devices

Performance characteristics of resonant cavity light-emitting diodes operating at the wavelength of 650 nm have been studied. It has been shown that a variation in device temperature significantly modifies the far-field pattern and thus the fibre coupling efficiency, due to a cavity detuning effect. Temperature dependences of output power and emission wavelength are also studied. Modulation bandwidth of >120 MHz and light power of 2 mW (cw) have been achieved for 84 µm devices driven at a 40 mA current. Accelerated ageing tests for 36 000 device hours indicate no degradation in output power.