Synthesis of metallic and semiconductor nitrides by multipulse laser irradiation of solid samples in ambient gases
1989; Elsevier BV; Volume: 43; Issue: 1-4 Linguagem: Inglês
10.1016/0169-4332(89)90230-4
ISSN1873-5584
AutoresV. Crǎciun, G. Leggieri, A. Luches, M. Martino, I. N. Mihãilescu, I. Ursu,
Tópico(s)Semiconductor materials and devices
ResumoWe report the synthesis of nitride surface layers by multipulse XeCl excimer laser irradiation (λ=308 nm) of Ti, Si and Ge samples in ambient NH3 or N2 atmospheres. The nitride synthesis was obtained for all the three materials submitted to laser irradiation and the amount of nitride formed was shown to depend, under various extents, on the kind of sample, the incident laser fluence, the number of subsequent laser pulses, the nature and pressure of the ambient gas, and so on. The nitridation process is very sensitive to the presence of oxygen. It was thus evidenced that only traces of oxygen were sufficient for promoting the formation of oxides.
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