Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy
2005; Elsevier BV; Volume: 275; Issue: 3-4 Linguagem: Inglês
10.1016/j.jcrysgro.2004.12.020
ISSN1873-5002
AutoresW. K. Cheah, W. J. Fan, Soon Fatt Yoon, Tien Khee Ng, Wan Khai Loke, D.H. Zhang, Ting Mei, R. Liu, Andrew T. S. Wee,
Tópico(s)Semiconductor materials and devices
ResumoThe indium and nitrogen incorporation in InGaAsN/InGaAs/GaAsN grown on GaAs substrates is investigated by means of photoluminescence (PL) and secondary ion mass spectroscopy (SIMS) measurements. The elemental profile and concentration collected from the two methods are then used as the simulation parameters to fit the X-ray diffractometry (XRD) measurements. The simulations indicate that the epitaxial parameters in our growth of InGaAsN/InGaAs/GaAsN epilayers are consistent throughout the three methods of analysis.
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