X-ray induced, substrate-carrier mediated deposition of metal on GaAs
2006; American Institute of Physics; Volume: 89; Issue: 8 Linguagem: Inglês
10.1063/1.2336592
ISSN1520-8842
AutoresQing Ma, Ralu Divan, Derrick C. Mancini, R. A. Rosenberg, J. P. Quintana, Denis T. Keane,
Tópico(s)Advanced Electron Microscopy Techniques and Applications
ResumoA wet metal deposition process on GaAs surfaces is described. The process is induced by high energy x-ray photons and is mediated by photon-generated carriers through the photoelectrochemical mechanism similar to that for light-induced wet etching. The micrometer to submicrometer feature fabrication using this process is demonstrated.
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