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White light-emitting diodes of GaN-based Sr2SiO4:Eu and the luminescent properties

2003; American Institute of Physics; Volume: 82; Issue: 5 Linguagem: Inglês

10.1063/1.1544055

1520-8842

Joung Kyu Park, Mi Ae Lim, Chang Hae Kim, Hee Dong Park, Joon Taik Park, Se Young Choi,

Gas Sensing Nanomaterials and Sensors

We have synthesized a Eu2+-activated Sr2SiO4 yellow phosphor and investigated an attempt to develop white light-emitting diodes (LEDs) by combining it with a GaN blue LED chip. Two distinct emission bands from the GaN-based LED and the Sr2SiO4:Eu phosphor are clearly observed at 400 nm and at around 550 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results showed that GaN (400-nm chip)-based Sr2SiO4:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460-nm chip)-based YAG:Ce.