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Estimation of the electron lifetime in tetramethylsilane

1988; Elsevier BV; Volume: 271; Issue: 3 Linguagem: Inglês

10.1016/0168-9002(88)90306-3

1872-9576

I. Lopes, K. Masuda, T. Doke,

Semiconductor materials and devices

The variation of the collected charge with electric field in a diode-type ionization chamber is used to estimate the electron lifetime in tetramethylsilane (TMS). The primary ionizing particles are the 976 keV conversion electrons emitted from a 207Bi source. In the best purity sample of TMS we obtained an electron lifetime of 11 ± 2 μs which corresponds to an attenuation length at 10 kV/cm, equal to 11 cm. The free ion yield at zero electric field, Gf(0), is determined to be 0.51 ± 0.05.