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Electrical conductivity measurements in a Ge-Se-Tl system

1988; Elsevier BV; Volume: 103; Issue: 2-3 Linguagem: Inglês

10.1016/0022-3093(88)90198-6

1873-4812

M. J. Zope, B. D. Muragi, J.K. Zope,

Semiconductor materials and interfaces

Abstract The I - V characteristics and dc conductivity measurements of bulk Ge10Se90−xTlx with x = 1 to 9 have been experimentally investigated. The increase in room temperature conductivity is attributed to increase in the percentage of thallium (Tl), which creates charged centers inside the bulk of the material. The decrease in activation energy with increase in thallium content has been discussed on the basis of formation of new charged centers Tl4− (C20)3 in the mobility gap which shifts the Fermi level towards the valence band. An energy band diagram has been suggested on the basis of new charged centers Tl4− (C20)3 and C3+ for a Ge-Se- Tl system.