Bound exciton luminescence in GaP:Cu,O
1972; Elsevier BV; Volume: 5; Issue: 4 Linguagem: Inglês
10.1016/0022-2313(72)90015-4
ISSN1872-7883
Autores Tópico(s)Ga2O3 and related materials
ResumoLuminescence from Cu,O-diffused high-ohmic p-type GaP crystals exhibits hitherto unobserved complexity in the red spectral region (1.6−1.9 eV). The present investigation concerns the features of three different emission series, denoted by C, E1 and E2, simultaneously present in these crystals. From detailed measurements of emission and excitation spectra at different temperatures the properties of any of these emissions could be studied separately. The low-temperature spectra for the two line emission series E1 (1.78−1.72 eV) and E2 (1.67−1.62 eV) show strong resemblances to well-known properties of isoelectronic complexes such as, for example, Cd,O in GaP. The featureless broad C emission (1.81 eV) is probably of a similar physical origin as E1 and E2, so that all three emissions are believed to originate from excitons bound to different complexes involving Cu and possibly O. Further work to determine the chemical nature of these defects is suggested.
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