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Guaranteed accuracy of the method of ‘simple’ compensation in electron lithography

1990; Elsevier BV; Volume: 11; Issue: 1-4 Linguagem: Inglês

10.1016/0167-9317(90)90187-x

1873-5568

V. V. Aristov, A.A. Svintsov, S. I. Zaitsev,

Integrated Circuits and Semiconductor Failure Analysis

Many studies have shown that the proximity effect in electron lithography may be significantly reduced (corrected) by choosing an appropriate dose of sample exposure T(x,y). However, the problem of the accuracy that is guaranteed by different correction methods has yet to be solved. The present work was undertaken with a view to take complete account of positive resist development in electron lithography, to develop simple correction mwthods, and to determine their guaranteed accuracy.