Atomic layer epitaxy of AlAs using ethyldimethylamine alane as a new aluminum source
1994; American Institute of Physics; Volume: 65; Issue: 9 Linguagem: Inglês
10.1063/1.112977
ISSN1520-8842
AutoresN. Kano, Shingo Hirose, Kazuhiko Hara, Junji Yoshino, H. Munekata, Hiroshi Kukimoto,
Tópico(s)Advancements in Semiconductor Devices and Circuit Design
ResumoAtomic layer epitaxy (ALE) of AlAs layers has been studied with the alternate supplies of ethyldimethylamine alane (EDMAAl) and arsine as aluminum and arsenic sources. Self-limiting growth at either one- or two-monolayer per source supply cycle is clearly observed under the specific growth conditions defined by the substrate temperatures (250–650 °C) and the flow rates of EDMAAl (0.8–1.1 and 1.5–1.7×10−2 sccm). Carbon concentration in the resultant AlAs layers is estimated to be about 1017–1018 cm−3.
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