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SiO x surface stoichiometry by XPS: A comparison of various methods

1994; Wiley; Volume: 22; Issue: 1-12 Linguagem: Inglês

10.1002/sia.740220122

1096-9918

R. Alfonsetti, Giovanni de Simone, L. Lozzi, M. Passacantando, P. Picozzi, S. Santucci,

Ga2O3 and related materials

Abstract The surface stoichiometry of SiO x thin films ( x = 1,…, 2) has been determined by means of x‐ray photoelectron spectroscopy using: (a) two well established methods involving the determination of the area of the O 1s and Si 2p core level peaks and the analysis of the Si 2p line shape, respectively, and (b) the method of the modified Auger parameter recently suggested. The agreement between the different approaches for determination of the stoichiometry of the films indicates the modified Auger parameter procedure as an easy, fast and very reliable method to ascertain the surface stoichiometry of SiO x films.