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Instrumental cross-contamination in the Cameca IMS-3F secondary ion microscope

1983; Elsevier BV; Volume: 218; Issue: 1-3 Linguagem: Inglês

10.1016/0167-5087(83)90998-5

1872-9606

V. R. Deline,

Analytical chemistry methods development

Abstract Optimum detection sensitivities in secondary ion mass spectrometry (SIMS) require the use of efficient secondary ion extraction optics placed within a few millimeters of the target. Removal of previously deposited materials form the mechanical structure of the extraction optics are shown to introduce a background which can degrade the limit of detection. The sputtering of GaAs prior to the analysis of As in silicon results in a detectable As background of up to 2.2×10 18 atoms/cm 3 . Similarly, the sputtering of silicon will result in a detectable background of Si in GaAs reaching into the low 10 16 atoms/cm 3 range.