Electrolyte-gated charge accumulation in organic single crystals
2006; American Institute of Physics; Volume: 89; Issue: 20 Linguagem: Inglês
10.1063/1.2387884
ISSN1520-8842
AutoresHidekazu Shimotani, Haruhiko ASANUMA, Jun Takeya, Yoshihiro Iwasa,
Tópico(s)Mechanical and Optical Resonators
ResumoComparative studies of electrolyte-gated and SiO2-gated field-effect transistors have been carried out on rubrene single crystals by experimentally estimating their accumulated charges. The capacitance of the electrolyte gate at 1mHz was 15μF∕cm2, which is more than two orders of magnitude larger than that of the 100-nm-thick SiO2 gate dielectric. The maximum carrier density in the electrolyte gate was 0.33hole∕molecule, which is considerably larger than that in the SiO2 gate. Furthermore, the transfer characteristics of the electrolyte-gate field-effect transistor showed reversible-peak behavior at an accumulated carrier density of 0.23hole∕molecule.
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