Characterization of ion damage on p -type cadmium telluride surfaces
1988; American Institute of Physics; Volume: 64; Issue: 5 Linguagem: Inglês
10.1063/1.341581
ISSN1520-8850
AutoresKuo-Fu Chien, Alan L. Fahrenbruch, Richard H. Bube,
Tópico(s)Chalcogenide Semiconductor Thin Films
ResumoThe effects of low-energy Ar ions (0–800 eV), from an ion beam and in an rf sputtering unit on the surface of single-crystal p-type CdTe have been investigated as a function of the ion energy using measurements of current versus voltage, spectral response, and capacitance versus voltage for indium junctions on CdTe. A threshold for the effects has been identified at an accelerating voltage of slightly less than 100 V for a fluence of 5×10−3C cm−2. Bombardment by Ar ions at voltages larger than this results in formation of an n-type surface layer on the p-type CdTe crystals.
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