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The Effect of N 2 Flow Rate in He/O 2 /N 2 on the Characteristics of Large Area Pin-to-Plate Dielectric Barrier Discharge

2004; Institute of Physics; Volume: 44; Issue: 1L Linguagem: Inglês

10.1143/jjap.44.l78

1347-4065

Yonghyuk Lee, Se-Jin Kyung, Chang‐Hyun Jeong, G.Y. Yeom,

Surface Modification and Superhydrophobicity

In this study, the effects of N 2 flow rate in the He/O 2 /N 2 gas mixture on the characteristics of a pin-to-plate dielectric barrier discharge (DBD) having the size of 100 mm ×1000 mm have been investigated for the application to flat panel display processing such as photoresist ashing. The pin-to-plate DBD showed about 70–120% higher photoresist ashing rate at the same applied voltage compared to the conventional DBD. The addition of 3 slm of N 2 to He(10 slm)/O 2 (3 slm) showed the highest photoresist ashing rate of about 580 nm/min for the pin-to-plate DBD at 12 kV of AC voltage. The increase of N 2 flow rate in He/O 2 gas mixture up to 3 slm appeared to increase the density of N 2 + ions and N 2 metastables while the oxygen atomic density appeared to decrease continuously. The increase of photoresist ashing rate with the increase of N 2 flow rate up to 3 slm was related to the increase of the substrate surface temperature by the increased collision of N 2 + ions and N 2 metastables with the substrate.