Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique
2004; Elsevier BV; Volume: 268; Issue: 3-4 Linguagem: Inglês
10.1016/j.jcrysgro.2004.04.098
ISSN1873-5002
AutoresH. W. Lee, Shu Ping Lau, Yuanyuan Wang, K.Y. Tse, Huey Hoon Hng, Beng Kang Tay,
Tópico(s)Gas Sensing Nanomaterials and Sensors
ResumoHighly conductive and transparent aluminum-doped zinc oxide (ZnO:Al) thin films have been prepared using the filtered cathodic vacuum arc technique at relatively low temperatures. The properties of ZnO:Al films under the influence of substrate temperature were investigated. It was found that the optical, electrical and structural properties of the films depended directly on substrate temperature during deposition. ZnO:Al films exhibited c-axis oriented crystal growth. The ZnO:Al films were prepared using Zn–Al alloy targets with various Al content. The lowest resistivity of 8×10−4 Ω cm was obtained for the Al-doped (5 at%) film prepared at a substrate temperature of 150°C. The optical absorption edge was found to shift to the shorter wavelength with a reduction in substrate temperature, and it was found that doping with Al had the effect of broadening the optical band gap, with both cases being attributed to the Burstein–Moss shift.
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