Influence of sputtering parameters on microstructure and morphology of TiO2 thin films
2002; Elsevier BV; Volume: 57; Issue: 2 Linguagem: Inglês
10.1016/s0167-577x(02)00788-7
ISSN1873-4979
AutoresSeon-Hwa Kim, Yong-Lak Choi, Yo-Seung Song, Deuk Yong Lee, Se‐Jong Lee,
Tópico(s)Catalytic Processes in Materials Science
ResumoTitanium dioxide thin films were sputtered on Si substrate by systematically varying the process conditions including O2/(Ar+O2) ratio, working pressure, sputtering time and dc power, respectively, without heating the substrate, to evaluate the microstructure and the morphology of the films. The optimum condition for the films is 23% of O2/(Ar+O2), 2×10−3 Torr of working pressure, sputtering time longer than 10 min and dc power higher than 150 W, respectively. During sputtering, amorphous α-SiO2 phase was firstly grown on Si substrate, amorphous α-TiO2 structure close to α-SiO2 phase was then formed to reduce the surface energy and columnar TiO2 films normal to amorphous α-TiO2 were finally developed. The surface morphology of the films was a typical island structure consisting of fine particles of 10–30 nm.
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