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In 0.5 Ga 0.5 As/InAlAs Modulation-doped Field Effect Transistors on GaAs Substrates Grown by Low-Temperature Molecular Beam Epitaxy

1991; Institute of Physics; Volume: 30; Issue: 12S Linguagem: Inglês

10.1143/jjap.30.3850

1347-4065

H. Masato, Toshinobu Matsuno, Kaoru Inoue Kaoru Inoue,

Semiconductor materials and devices

We report on the lattice-mismatched growth and electrical properties of In 0.5 Ga 0.5 As/InAlAs modulation-doped heterostructures on GaAs substrates by molecular beam epitaxy using a wide-gap InAlAs graded buffer layer and low-temperature Molecular Beam Epitaxial growth at about 350°C. A drastic reduction in residual carrier accumulation has been achieved, and a high electron mobility at room temperature of 11100 cm 2 /V·s was obtained with an electron concentration of 3×10 12 /cm 2 . It was found that the cause of residual carrier accumulation is related to the growth interruption or temperature rise after the growth of the graded buffer layer. The fabricated Modulation-doped Field Effect Transistors showed low output conductance, good pinch-off characteristics and no kink effect. The higher transconductance of 270 mS/mm was also obtained.