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Resonant Transport in Nb / GaAs / AlGaAs Heterostructures: Realization of the de Gennes–Saint-James Model

2001; American Physical Society; Volume: 87; Issue: 21 Linguagem: Inglês

10.1103/physrevlett.87.216808

1092-0145

Francesco Giazotto, Pasqualantonio Pingue, Fabio Beltram, Marco Lazzarino, Daniela Orani, S. Rubini, A. Franciosi,

Magnetic properties of thin films

Resonant transport is demonstrated in a hybrid superconductor-semiconductor heterostructure junction grown by molecular beam epitaxy on GaAs. This heterostructure realizes the model system introduced by de Gennes and Saint-James in 1963 [P. G. de Gennes and D. Saint-James, Phys. Lett. 4, 151 (1963)]. At low temperatures a single marked resonance peak is shown superimposed to the characteristic Andreev-dominated subgap conductance. The observed magnetotransport properties are successfully analyzed within the random matrix theory of quantum transport, and ballistic effects are included by directly solving the Bogoliubov-de Gennes equations.