Coherent tunneling and giant tunneling magnetoresistance in Co 2 FeAl / MgO / CoFe magnetic tunneling junctions
2010; American Physical Society; Volume: 81; Issue: 14 Linguagem: Inglês
10.1103/physrevb.81.140402
ISSN1550-235X
AutoresWenhong Wang, Enke Liu, M. Kodzuka, Hiroaki Sukegawa, Marec Wojcik, E. Jȩdryka, Guangheng Wu, Kōichirō Inomata, Seiji Mitani, K. Hono,
Tópico(s)MXene and MAX Phase Materials
ResumoSpin-dependent coherent tunneling has been experimentally observed in high-quality sputtered-deposited ${\text{Co}}_{2}\text{FeAl}/\text{MgO}/\text{CoFe}$ epitaxial magnetic tunneling junctions (MTJs). Consequently, the microfabricated MTJs manifest a very large tunnel magnetoresistance (TMR) at room temperature and an unexpectedly TMR oscillation as a function of MgO barrier thickness. First-principles electronic band calculations confirm the pronounced coherent tunneling effect and are in good agreement with the experimental data. The present work demonstrates the importance of coherent tunneling for large TMR with Heusler alloys
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