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Stimulated emission study of InGaN/GaN multiple quantum well structures

2000; American Institute of Physics; Volume: 76; Issue: 3 Linguagem: Inglês

10.1063/1.125732

1520-8842

Chi-Chih Liao, Shih-Wei Feng, C. C. Yang, Yen-Sheng Lin, Kung-Jen Ma, Chang‐Cheng Chuo, Chia-Ming Lee, Jen-Inn Chyi,

Metal and Thin Film Mechanics

We report the study results of an InGaN/GaN multiple quantum well structure with a nominal indium content of 25%. The high-resolution transmission electron microscopy and x-ray diffraction show clear indium aggregation and phase separation. Stimulated emission data always show two major peaks in spectrum. The long- (short-) wavelength peak is assigned to the recombination of localized state carriers (free carriers). At low temperatures or optical pump levels, the localized-state recombination dominates the stimulated emission; however, at high temperatures or pump levels, the free-carrier recombination becomes dominant. The peak position corresponding to localized states changes little in spectrum as temperature or pump level varies. This result is attributed to carrier overflow, strain relaxation, and carrier shielding in increasing temperature or carrier supply.