Self-limiting growth of GaAs with doping by molecular layer epitaxy using triethyl-gallium and AsH3
2002; Elsevier BV; Volume: 244; Issue: 3-4 Linguagem: Inglês
10.1016/s0022-0248(02)01663-9
ISSN1873-5002
AutoresJun‐ichi Nishizawa, Toru Kurabayashi, Piotr Płotka, Hideyuki Kikuchi, Tomoyuki Hamano,
Tópico(s)Advanced Semiconductor Detectors and Materials
ResumoSelf-limiting growth of GaAs with doping by molecular layer epitaxy has been studied using the intermittent supply of triethyl-gallium (TEG), AsH3, and a dopant precursor, Te(CH3)2 (diethyl-tellurium: DETe) or Se(CH3)2 (diethyl-selenium: DESe) for n-type growth on GaAs(0 0 1). The self-limiting monolayer growth is applicable at the temperature of 265°C; however, the growth rate per cycle of doping decreased with increasing DETe pressure and saturated at about 0.4 monolayer with a saturation of the carrier concentration at 1.1–1.4×1019 cm−3. The carrier concentration was strongly influenced by the surface-terminating species, and the growth rate reduction in the TEG–AsH3 system is due to the electrical characteristics of the growing surface, namely, the exchange reaction of TEG and AsH3 shifted to a higher temperature.
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