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Estimation of Local Crystallization of a-Si:H Thin Films by Nanosecond Pulsed Laser Irradiation Through Local Temperature Simulation

2012; Elsevier BV; Volume: 39; Linguagem: Inglês

10.1016/j.phpro.2012.10.040

1875-3892

O. García, J.J. García-Ballesteros, D. Muñoz-Martín, Sara Núñez‐Sánchez, M. Morales, J. Cárabe, I. Torres, J.J. Gandı́a, C. Molpeceres,

Silicon Nanostructures and Photoluminescence

We present a detailed study of the wavelength influence in pulsed laser annealing of amorphous silicon thin films, comparing the results for material modification at different fluence regimes both in the three fundamental harmonics of standard DPSS laser sources, UV (355 nm), visible (532 nm) and IR (1064 nm), and KrF (248 nm) excimer laser sources. Samples of hydrogenated amorphous silicon thin films were irradiated and characterized with MicroRaman techniques. A finite element model (FEM) was developed in COMSOL to simulate the process. The numerical and experimental results are presented, proving that the process can be predicted with a model based on heat transport.