Artigo
Revisado por pares
Studies on deep levels in GaAs epilayers grown on Si by metal-organic chemical vapour deposition, Part II: 1.13 eV photoluminescence emission
1994; Springer Science+Business Media; Volume: 13; Issue: 23 Linguagem: Inglês
10.1007/bf00451743
ISSN1573-4811
AutoresJ. L. Zhao, Ying Gao, Xingyuan Liu, Xinshe Su, Shanshan Huang, Jian Yu, Jiachang Liang, Haihua Gao,
Tópico(s)Silicon Nanostructures and Photoluminescence
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