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Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation

2013; Institute of Electrical and Electronics Engineers; Volume: 34; Issue: 2 Linguagem: Inglês

10.1109/led.2012.2233458

1558-0563

Gang Liu, A. C. Ahyi, Yi Xu, Tamara Isaacs‐Smith, Yogesh Sharma, John Williams, L. C. Feldman, Sarit Dhar,

Copper Interconnects and Reliability

Low interface trap density and high channel mobility on nonpolar faces of 4H-SiC, such as the (11[2̅]0) a-face, are of fundamental importance in the understanding of SiC MOS devices. It is also critical for high-voltage trench power MOSFET development. We report new results on the passivation of the SiO 2 /a-face 4H-SiC interface using phosphorus, yielding field effect mobility of ~125 cm 2 /V · s. We also revisit the conventional NO passivation, for which a mobility of ~85 cm 2 /V · s was achieved on the a-face. These results not only establish new levels of mobility in SiC MOSFETS but also lead to further insights into factors currently limiting SiC inversion layer mobility.